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Our interest in nanoelectronics has shifted from design automation to
fundamental device physics and materials by working with
Professor Tour from Rice Chemistry
and Professor Natelson
from Rice Physics.
- Mian Dong and
Lin Zhong, "Logic synthesis with nanowire crossbar: Reality check
and standard cell-based integration,"
in Proc. IEEE Design Automation & Test in Europe Conf (DATE),
March 2008. (PDF)
- Mian Dong and
Lin Zhong, "Challenges to crossbar integration of nanoscale
two-terminal symmetric memory devices," in Proc. IEEE
Int. Conf. Nanotechnology, August 2008. (PDF)
- Jun Yao,
Lin Zhong, Douglas Natelson, and James M. Tour, "Etching-dependent
reproducible memory switching in vertical SiO2
structures," in Applied Physics Letters, vol. 93, issue
25, 2008
- Mian Dong and
Lin Zhong, "Nanowire crossbar logic and standard cell-based
integration," in IEEE Trans. on Very Large Scale
Integration Systems, August 2009.
- Jun Yao,
Lin Zhong, Zengxing Zhang, Tao He, Zhong Jin, Patrick J. Wheeler, Douglas Natelson, and James M. Tour, "Resistive
switching in nanogap systems on SiO2 substrates,"
in Small, 5 (24), pp.2910-2915, 2009. (PDF)
- Jun Yao,
Zhong Jin, Lin Zhong, Douglas Natelson, and James M. Tour, "Two-terminal
nonvolatile memories based on single-walled carbon nanotubes," in
ACS Nano,
3 (12), pp. 4122-4126, 2009. (PDF)
- Jun Yao, Zhengzong Sun, Lin Zhong,
Douglas Natelson, and James Tour, "Resistive switches and
memories from silicon oxide," in
ACS Nano Letters,
2010.
(Link)
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Jun Yao, Lin Zhong, Douglas Natelson, and James Tour, "Intrinsic
resistive switching and memory effects in silicon oxide," in
Applied Physics A (Materials Science & Processing),
102 (4), pp. 835-839, 2011.
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Jun Yao, Lin Zhong, Douglas Natelson, and James Tour, "Silicon
Oxide is a non-innocent surface for molecular electronics and
nanoelectronics studies," Journal of the American Chemical
Society, 133 (4), pp. 941-948, 2011.
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